Accession Number : ADD008034

Title :   Tungsten-Titanium-Chromium/-Gold Semiconductor Metallization.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gleason,K Reed

Report Date : 28 Oct 1980

Pagination or Media Count : 4

Abstract : Improved TRAPATT diodes in which the improvement comprises a high-temperature metallization on silicon from which the diodes are formed. Metallization is applied to a silicon wafer by sputtering a layer of titanium, chromium, tungsten alloy followed by a gold layer. The desired diode shape and size is defined in the gold layer by use of a pattern of the proper shape and size in combination with a photolithographic process. The metallization layers and the silicon are then etched so as to form a plurality of individual shaped (mesa or ring structure) TRAPATT diodes. Such diodes can withstand 610 deg C for one hour without degradation. (author)

Descriptors :   *Patents, *Semiconductor diodes, *TRAPATT devices, *Metallizing, Layers, Chromium alloys, Titanium alloys, Tungsten alloys, Gold, Etching

Subject Categories : Fabrication Metallurgy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE