Accession Number : ADD008148

Title :   Localized Anodic Thinning.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Shaw,Don W

Report Date : 03 Feb 1981

Pagination or Media Count : 7

Abstract : This report describes a protective mask and a method of localized anodic thinning to prevent excessive thinning of an epitaxial layer in the forming of a field effect transistor. A moat exposing the epitaxial layer is provided in the protective mask surrounding a device pattern or group of patterns to be formed in the epitaxial layer by anodic thinning. During the thinning process, the area of the epitaxial layer exposed by the moat becomes fully depleted and cuts off current into the region surrounded by the moat and prevents excessive thinning of the epitaxial layer under the design pattern.

Descriptors :   *Patents, *Protective masks, *Thinness, *Anodic coatings, *Epitaxial growth, Layers, Field effect transistors, Processing, Wafers, Semiconductors, Electrolytes, Fabrication, Inventions, Insulation, Substrates, Gallium arsenides

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Protective Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE