Accession Number : ADD008180

Title :   Band Interacting Tunnel Heterojunction.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Sai-Halasz,George A ; Esaki,Leo

Report Date : 09 Mar 1981

Pagination or Media Count : 14

Abstract : A bilateral tunnel device having a voltage dependent transfer coefficient is disclosed which includes a heterostructure consisting of a first layer of GaSb sub 1-yAS sub y, a second layer of In sub 1-xGA sub xAS, and a third layer of GASb sub 1-yAS sub y. The thicknesses of the first and third layers are not critical but the thickness of the second layer must be less than 200 angstroms thick. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel device of the instant invention.

Descriptors :   *Patent applications, *Heterojunctions, *Tunneling(Electronics), Indium compounds, Gallium arsenides, Interactions, Layers, Transfer, Thickness, Voltage, Tunnels, Coefficients

Subject Categories : Quantum Theory and Relativity
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE