Accession Number : ADD008413
Title : Improved Field-Effect Transistor.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder,Max N
Report Date : 16 Sep 1980
Pagination or Media Count : 8
Abstract : This invention discloses a method for improving field-effect transistors. Wherein the resistivity of the upper layer of the source-gate channel region of a GaAs field-effect transistor (FET) may be selectively raised. Impurity ions are implanted in the source-gate channel region followed by a much shallower implant of boron in the same region. The boron ion concentration should exceed the N+ impurity ion concentration by a factor of 2 or more.
Descriptors : *Patent applications, *Field effect transistors, *Gallium arsenides, Gates(Circuits), Electrical Resistance, Impurities, Inventions, Substrates, Transistors, Boron, Ions
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE