Accession Number : ADD008477

Title :   Method of Producing a Microwave INP/SiO2 Insulated Gate Field Effect Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Messick,Louis J

Report Date : 24 Feb 1981

Pagination or Media Count : 7

Abstract : An InP/SiO2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator. (Author)

Descriptors :   *Patents, *Field effect transistors, *Microwave frequency, Gates(Circuits), Power gain, Indium phosphides, Epitaxial growth, Thin films, N type semiconductors, Substrates, Silicon dioxide

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE