Accession Number : ADD008492

Title :   MBE Growth Technique for Matching Superlattices Grown on GaAs Substrates.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Chang,Chin-An ; Chang,L L ; Esaki,Leo

Report Date : 23 Jan 1981

Pagination or Media Count : 9

Abstract : Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and In(sub 1 - x)Ga(sub x)As-GaSb(sub 1 - y)As(sub y) superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice. (Author)

Descriptors :   *Patent applications, *Epitaxial growth, *Molecular beams, Crystal lattices, Semiconducting films, Matching, Interfaces, Substrates, Gallium arsenides, Indium antimonides, Alignment, Dislocations, Concentration(Chemistry), Gradients

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE