Accession Number : ADD008493

Title :   InAs-Gasb Tunnel Diode.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Esaki,Leo ; Chang,Chin-An

Report Date : 23 Jan 1981

Pagination or Media Count : 9

Abstract : Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quarternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode. (Author)

Descriptors :   *Patent applications, *Tunnel diodes, *Indium compounds, *Arsenides, *Gallium antimonides, Quaternary compounds, Layers, Thinness, P type semiconductors, N type semiconductors, Junction diodes

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE