Accession Number : ADD008504

Title :   Millimeter Wave Power Limiter.

Descriptive Note : Patent Application,


Personal Author(s) : Dixon,Samuel , Jr

Report Date : 12 Feb 1981

Pagination or Media Count : 8

Abstract : Disclosed is a millimeter wave bulk effect RF power limiter consisting of a planar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range. (Author)

Descriptors :   *Patent applications, *Limiters, *Gallium arsenides, *Pin diodes, *Radar equipment, Millimeter waves, Planar structures, Power levels, Radiofrequency power, Energy transfer, Guided missiles, Range(Extremes), Waveguides, Edges, Frequency, Energy, Substrates, Power, Guidance, Structures, Sides, Radiofrequency, Semiconductors

Subject Categories : Electrical and Electronic Equipment
      Active & Passive Radar Detection & Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE