Accession Number : ADD008561

Title :   Surface Channel Charge Transfer Device on Indium Phosphide.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Lile,Derek L ; Collins,David A

Report Date : 29 Apr 1981

Pagination or Media Count : 9

Abstract : A charge transfer device is provided having a p-type semi-conducting indium phosphide substrate on which a pair of channel contacts are disposed. An insulating layer spans the substrate surface between the contacts. Gate electrodes are disposed on the insulating layer between the channel contacts. (Author)

Descriptors :   *Patent applications, *Charge transfer, *Semiconductor devices, *Indium phosphides, Substrates, P type semiconductors, Gates(Circuits), Inventions

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE