Accession Number : ADD008597

Title :   Method for Controlling Impurities in Liquid Phase Epitaxial Growth.

Descriptive Note : Patent Application,


Personal Author(s) : Stevenson,David A

Report Date : 06 Mar 1981

Pagination or Media Count : 15

Abstract : In a process for growth of a layer of semiconductor material by precipitation from a solution of the semiconductor material in a solvent by liquid phase epitaxial growth (LPE), the improvement is the step of adding from approximately 0.01% to 1.0% by weight of a material which forms a stable oxide or sulfide and is soluble in the solvent to the solution prior to the step of precipitating the semiconductor layer to eliminate the deleterious effects of residual oxygen. A relatively short annealing time is required to dissolve the addition in the solvent and allow the addition to react with dissolved oxygen or other impurities before a conventional LPE growth process may be initiated, although high temperature anneals of varying length may precede or follow the addition of the oxide-forming or sulfide-forming material. Zirconium, titanium, vanadium, scandium, yttrium, and aluminum are in general suitable for use as the oxide-forming material. (Author)

Descriptors :   *Patent applications, *Liquid phases, *Epitaxial growth, Materials, High temperature, Titanium, Oxygen, Aluminum, Zirconium, Precipitation, Impurities, Yttrium, Semiconductors, Scandium, Length, Vanadium, Annealing, Growth(General)

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE