Accession Number : ADD008649

Title :   Superior Ohmic Contacts to III-V Semiconductor by Virtue of Double Donor Impurity.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder,Max

Report Date : 25 Mar 1981

Pagination or Media Count : 9

Abstract : This application discloses a method for fabricating superior ohmic contacts in a III-V semiconductor wafer by virtue of double donor (or double acceptor) impurity complex formation. A typical III-V, e.g., GaAs, semiconductor device is fabricated by depositing in thin Si3N4 layer and then regions are opened, by photoresist methods, upon which ohmic contacts are to be made. New resist is applied over the wafer and the ohmic contact regions are again opened. Si ions are now implanted to form the active channel and the drain and source regions (in an FET device). The resist layer is removed, a layer of Ge is laid down and a layer of Se over the Ge. The Ge layer is coated with a layer of SiO2, Si3N4 or a mixture of both, and annealed, causing the Ge and Se to diffuse rapidly into the Si ion implant region. The Si3N4 and excess surface Ge and Se is now removed. Metallization of the electrode areas, preferably with reliable refractory metals, is effected, producing ohmic tunneling contacts over the Ge/Se diffused regions rectifying, non-ohmic, Schottky barrier contacts over the selected remainder of the Si-implanted region.

Descriptors :   *Patent applications, *Electric contacts, *Semiconductors, Wafers, Substrates, Gallium arsenides, Layers, Silicon nitrides, Silicon dioxide, Ion implantation, Germanium, Selenium, Annealing, Diffusion, Impurities, Metallizing, Tunneling(Electronics)

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE