Accession Number : ADD008670
Title : Semiconductor Encapsulant for Annealing Ion-Implanted GAAS.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Davey,John E ; Christou,Aristos ; Dietrich,Harry B
Report Date : 12 May 1981
Pagination or Media Count : 4
Abstract : A method is described for protecting an ion-implanted substrate during the annealing process by covering the ion-implanted layer with a suitable encapsulant. A thin layer of ions are implanted into a GaAs substrate. A protective layer of germanium, amorphous GaAs, doped GaAs, or GaAlAs is applied over the implanted layer and on the periphery of the ion-implanted GaAs substrate. The composite is annealed at a temperature which is adequate for the lattice to recover from the ion-implantation-induced damage. The protective layer is removed subsequent to the anneal step, without any damage to the ion-implanted layer.
Descriptors : *Patents, *Protective coatings, *Semiconductors, Gallium arsenides, Substrates, Ion implantation, Layers, Annealing, Encapsulation, Metal coatings
Subject Categories : Coatings, Colorants and Finishes
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE