Accession Number : ADD008670

Title :   Semiconductor Encapsulant for Annealing Ion-Implanted GAAS.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Davey,John E ; Christou,Aristos ; Dietrich,Harry B

Report Date : 12 May 1981

Pagination or Media Count : 4

Abstract : A method is described for protecting an ion-implanted substrate during the annealing process by covering the ion-implanted layer with a suitable encapsulant. A thin layer of ions are implanted into a GaAs substrate. A protective layer of germanium, amorphous GaAs, doped GaAs, or GaAlAs is applied over the implanted layer and on the periphery of the ion-implanted GaAs substrate. The composite is annealed at a temperature which is adequate for the lattice to recover from the ion-implantation-induced damage. The protective layer is removed subsequent to the anneal step, without any damage to the ion-implanted layer.

Descriptors :   *Patents, *Protective coatings, *Semiconductors, Gallium arsenides, Substrates, Ion implantation, Layers, Annealing, Encapsulation, Metal coatings

Subject Categories : Coatings, Colorants and Finishes
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE