Accession Number : ADD008693

Title :   Method of Liquid Phase Epitaxial Growth.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Clawson,Arthur R ; Lum,Wing Y ; McWilliams,Gerald E

Report Date : 21 Apr 1981

Pagination or Media Count : 4

Abstract : This patent discloses an improved method of liquid phase epitaxial growth of III-V compound on an InP substrate by growing the epitaxial layer in an atmosphere of H2 with .00001 to .0001 mole fraction PH3.

Descriptors :   *Patents, *Epitaxial growth, *Indium phosphides, *Group III compounds, *Group V compounds, Substrates, Liquid phases, Phosphine

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE