Accession Number : ADD008732
Title : Quadrant Avalanche Photodiode.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Bottka,Nicholas ; Hills,Marian E
Report Date : 13 Jul 1981
Pagination or Media Count : 13
Abstract : This document describes a quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants. Semiinsulating material prevents cross-talk between quadrants. The Schottky barrier quadrant detectors were fabricated using GaAs(1-x) Sb(x) ternary alloys grown epitaxially on heavily doped GaAs substrates.
Descriptors : *Patent applications, *Avalanche diodes, *Detectors, *Planar structures, *Gallium arsenides, Schottky barrier devices, Ternary compounds, Proton bombardment, Photolithography, Alloys, Substrates, Quadrants, Surfaces
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE