Accession Number : ADD008783

Title :   Insulated Gate Field-Effect Transistors.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Meiners,Larry G

Report Date : 19 May 1981

Pagination or Media Count : 4

Abstract : An improved normally off insulated gate field-effect transistor capable of operation at frequencies in excess of 1 GHz wherein the substrate is a semi-insulating semiconductor. The substrate may be Fe or Cr doped InP or Fe or Cr-doped GaAs. Contacts for the source and drain electrodes are realized by forming n+ contacts for the n-channel device and p+ contacts for the p-channel device. Au-Sn will form n+ contacts while Au-Zn will form p+ contacts. (Author)

Descriptors :   *Patents, *Field effect transistors, *Gates(Circuits), Gallium arsenides, P type semiconductors, N type semiconductors, Iron, Chromium, Doping, Electrodes, Substrates, Drainage

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE