Accession Number : ADD008829

Title :   Vertical Field Effect Transistor with Barrier Gate.

Descriptive Note : Patent Application,


Personal Author(s) : Huang,Ho-Chung ; Matarese,Ralph H

Report Date : 21 Aug 1981

Pagination or Media Count : 10

Abstract : A high power frequency field effect transistor is achieved with a vertical structure of gallium arsenide including a semi-insulating substrate, a conductive layer over the substrate, a narrow-central post having small metal gate electrodes on each side, metal drain electrodes on the conductive layer spaced from the central pose and a metal source electrode supported on the central post. A deep channel around the post separates the metal drains, gates and source. Increased power is obtained from a cellular unit including two parallel source stripes, four gates and three drains. The drains are connected together by the conductive layer and a drain pad at one end, and the gates are connected at the other end by a gate pad on an outer region of the substrate. The gate connections to the pad are isolated from the conductive layer by a bridge over a space etched in the lower layer. A method for fabrication of this structure is also provided. (Author)

Descriptors :   *Patent applications, *Field effect transistors, *Gallium arsenides, *Gates(Circuits), Vertical orientation, Schottky barrier devices, Parallel orientation, High frequency, High power, Conductivity, Drainage, Layers, Barriers, Substrates, Stripes, Metals, Channels, Sources, Cells, Structures, Electrodes

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE