Accession Number : ADD008938

Title :   Monolithically Interconnected Series-Parallel Avalanche Diodes.

Descriptive Note : Patent Application,


Personal Author(s) : Rosen,Arye ; Klatskin,Jerome B

Report Date : 06 Dec 1979

Pagination or Media Count : 9

Abstract : Disclosed is an array of avalanche diodes and its method of manufacture which results in plural pairs of series connected mesa-etched avalanche (TRAPATT) diodes being selectively connected in parallel by metallized air bridges for increasing the impedance level and thereby the peak and average power level available from microwave oscillators and amplifiers configured therefrom. The various series connected diodes are placed in near proximity to respective neighboring diode pairs to reduce parasitics but at the same time the spacing is made sufficiently large to prevent thermal spreading of one diode pair to overlap that of the adjacent diode pair. The metallized air bridges in addition to providing a low inductance interconnection, provide an integrated heat capacitance which is necessary for high power operation. (Author)

Descriptors :   *Patent applications, *Avalanche diodes, *Circuit interconnections, Monolithic structures(Electronics), Integrated systems, Electric bridges, Power levels, High power, Air, Capacitance, Overlap, Heat, Operation, Bridges, Impedance, Diodes, Metallizing, Arrays

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE