Accession Number : ADD009048

Title :   Planar Doped Barrier Gate Field Effect Transistor.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Malik,Roger J ; AuCoin,Thomas R

Report Date : 23 Nov 1981

Pagination or Media Count : 11

Abstract : Disclosed is an epilayer field effect transitor having a planar doped barrier gate formed on an n-type semiconductor planar channeel region intermittent drain and source terminals formed on the surface of the channel region. The semiconductor channel region is fabricated on a semiconductor substrate, preferably GaAs and being separated therefrom by one or more semiconductor planar buffer regions. The planar doped barrier gate comprises an n+ - pi - p(+) - pi structure grown by molecular beam epitaxy over the n-type channel region. Application of an electrical potential to the gate modulates the channel charge depletion in the semiconductor channel region underlying the gate causing a variation in the channel conductance laterally between the source and drain terminals. (Author)

Descriptors :   *Patent applications, *Field effect transistors, *Doping, Planar structures, Conductivity, N type semiconductors, Channels, Substrates, Voltage, Buffers, Inventions

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE