Accession Number : ADD009079

Title :   Ion-Implanted Multilayer Optical Interference Filter.

Descriptive Note : Patent,


Personal Author(s) : Hubler,Graham K ; Malmberg,Philip R ; Smith,Theoren P , III

Report Date : 14 Apr 1981

Pagination or Media Count : 4

Abstract : This report describes a single or multilayer optical interference filter and method of forming the filter by ion implatation. One or more layers of nitrogen ions are implanted into a single crystal silicon with the crystal at a temperature of from about 600 deg C. to about 1000 deg C. The implanted ions create a buried layer(s) of silicon nitride (Si3N4) whose refractive index is substantially different from that of silicon (Si) such that apprecible multiple reflection of incident light occurs between the buried layer(s) and the front surface. The resulting interference maxima and minima in transmitted or reflected light which occur at well-defined positions in wavelength may be controlled both in amplitude and wavelength position. The ions may be implanted in layers at different depths to produce a 'thin film' interference filter.

Descriptors :   *Patents, *Optical filters, *Layers, *Single crystals, Thin films, Interference, Ion implantation, Nitrogen, Inventions, Ions, High temperature, Silicon nitrides, Amplitude, Reflection

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE