Accession Number : ADD009090

Title :   Niobium Tunnel Junction and Its Fabrication by Reactive Ion Beam Oxidation.

Descriptive Note : Patent Application,


Personal Author(s) : Buhrman,Robert A ; Kleinsasser,Alan W

Report Date : 23 Mar 1981

Pagination or Media Count : 16

Abstract : A method for growing high quality, ultra thin oxide layers on metal films, suitable for use as tunneling barriers in Josephson Junction devices. The oxides are produced with an argon-oxygen (Ar-O) ion beam, and the rate of growth is determined by the competition between oxidation and sputtering by the ions. This method results in variable current density submicron niobium (Nb) -lead (Pb) alloy Josephson Junctions with critical current density from low values to values exceeding 100,000 amp/sq cm and low leakage currents at voltages below the energy gap. An edge geometry has been developed, allowing in-line junctions to be formed on the ion mill-patterned edge of niobium (Nb) film. (Author)

Descriptors :   *Patent applications, *Ion beams, *Oxidation, *Josephson junctions, Tunneling(Electronics), Niobium, Crystal growth, Ions, Sputtering, Current density, Inventions, Energy gaps, Metal films, Thin films, Oxides, Barriers, Reaction kinetics

Subject Categories : Particle Accelerators
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE