Accession Number : ADD009099

Title :   Inversion-Mode Insulated Gate Ga0.47In0.53As Field-Effect Transistors.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Wieder,Herman H

Report Date : 14 Dec 1981

Pagination or Media Count : 10

Abstract : An apparatus and method for an inversion mode insulated gate field-effect transistor (FET) on Ga0.47In0.53As assures a high electron velocity and a consequent larger gain-bandwidth product at low electric fields in the microwave spectral range. A semi-insulating indium phosphide semiconductor substrate is used to grow a crystal lattice-matched p-type layer of the ternary alloy gallium indium arsenide. Grown or alloyed p-n junction or heterojunction source and drain contacts are made to this epitaxial Ga0.47In0.53As layer and a dielectric layer of silicon dioxide , covers the channel between the source and drain electrodes. A gate electrode over the dielectric layer controls the electron flow through the ternary alloy epilayer when an appropriate potential is applied to the gate electrode. A potential is applied between the source and drain electrodes and the electron current flowing between them is modulated by the amplitude of the positive voltage applied to the gate which inverts the surface charges on the p-type Ga0.47In0.53As epitaxial layer. (Author)

Descriptors :   *Patent applications, *Field effect transistors, *Gates(Circuits), *N type semiconductors, P type semiconductors, Heterojunctions, Dielectrics, Layers, Electric current, Inventions, Electrons, Bandwidth, Microwaves, Spectra, Insulation, Silicon dioxide, Gallium compounds, Alloys, Ternary compounds

Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE