Accession Number : ADD009122

Title :   Method of Chemically Vapor Depositing a Silicide Film.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Saraswat,Krishna C

Report Date : 17 Dec 1981

Pagination or Media Count : 8

Abstract : A film of a silicide of a refractory metal is chemically vapor deposited onto a substrate by placing a susceptor containing the substrate in a chemical vapor deposition reactor, flowing a compound of a refractory metal and a silicon bearing chemical diluted in nitrogen over the susceptor containing the substrate and heating the susceptor and substrate. The film is compatible with common integrated circuit techniques. (Author)

Descriptors :   *Patent applications, *Vapor deposition, *Chemicals, *Methodology, *Chemical reactors, Films, Silicides, Substrates, Bearings, Inventions, Nitrogen, Refractory metals, Integrated circuits

Subject Categories : Industrial Chemistry and Chemical Processing
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE