Accession Number : ADD009164

Title :   Refractory Oxide-Refractory InP Schottky Barrier.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Christou,Aristos

Report Date : 31 Dec 1981

Pagination or Media Count : 16

Abstract : This abstract discloses a Schottky barrier with InP formed by disposing a very thin film (150 A) of a refractory metal oxide over an InP layer and then disposing a thin film of a refractory metal over the refractory metal oxide. The resulting Schottky barrier is high (greater than 0.65eV) with very low leakage current. By way of example, the refractory metal oxide may be TiO2 and the refractory metal TiW.

Descriptors :   *Patent applications, *Schottky barrier devices, *Indium phosphides, Refractory metals, Thin films, Metal oxide semiconductors, Low level, Leakage(Electrical), Inventions

Subject Categories : Metallurgy and Metallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE