Accession Number : ADD009208

Title :   Compound Semiconductor Device Performance and Reproducibility Improvement.

Descriptive Note : Patent Application,


Personal Author(s) : Yoder,Max

Report Date : 26 Oct 1981

Pagination or Media Count : 12

Abstract : This application discloses a method of treating a compound semiconductor substrate material, such as GaAs, to imporove activation efficiency, reproducibility and reliability. The substrate is subjected to a prebombardment to a shallow depth by ions of an element such as Ar, or Ga, or As, which will not significantly affect the doping concentration of the substrate. Ions from an activator element, or elements, are then used for bombardment so that their peak concentration level occurs at a depth of about 80% of the peak concentration level of the prebombardment ions. This provides a very high activation efficiency and a sharp capacitance-voltage profile.

Descriptors :   *Patent applications, *Semiconductor devices, *Performance(Engineering), *Reproducibility, Activation, Efficiency, Ion implantation, Doping, Substrates, Shallow depth, Gallium arsenides, Methodology, Ion bombardment, Peak values

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE