Accession Number : ADD009208
Title : Compound Semiconductor Device Performance and Reproducibility Improvement.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder,Max
Report Date : 26 Oct 1981
Pagination or Media Count : 12
Abstract : This application discloses a method of treating a compound semiconductor substrate material, such as GaAs, to imporove activation efficiency, reproducibility and reliability. The substrate is subjected to a prebombardment to a shallow depth by ions of an element such as Ar, or Ga, or As, which will not significantly affect the doping concentration of the substrate. Ions from an activator element, or elements, are then used for bombardment so that their peak concentration level occurs at a depth of about 80% of the peak concentration level of the prebombardment ions. This provides a very high activation efficiency and a sharp capacitance-voltage profile.
Descriptors : *Patent applications, *Semiconductor devices, *Performance(Engineering), *Reproducibility, Activation, Efficiency, Ion implantation, Doping, Substrates, Shallow depth, Gallium arsenides, Methodology, Ion bombardment, Peak values
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE