Accession Number : ADD009314

Title :   Microwave-Infrared Detector with Semiconductor Superlattice Region.

Descriptive Note : Patent Application,


Personal Author(s) : Esaki,Leo ; Sai-Halasz,George A

Report Date : 28 Jul 1980

Pagination or Media Count : 10

Abstract : This invention concerns a detector and/or mixer of electromagnetic energy in the microwave-infrared region of the electromagnetic spectrum and is comprised of a body of semiconductor material having a superlattice region consisting of, for example, InAs - GaSb wherein the thickness of alternating epitaxial planar layers is in the range of 30A to 80A. Incident radiation perpendicular to the planar regions results in an electric field being provided in the plane of the layers which causes a reduction in the superlattice bandwidth and accordingly an increase in the transverse effective mass of the carriers. This results in a decrease in the perpendicular conductivity through the superlattice region. (Author)

Descriptors :   *Patent applications, *Infrared detectors, *Microwaves, *Semiconductors, Electromagnetic spectra, Lattice dynamics, Superconductors, Inventions, Crystal lattices, Planar structures, Electromagnetic radiation, Epitaxial growth, Mixers(Electronics), Electric fields, Layers, Bandwidth

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE