Accession Number : ADD009381

Title :   Method for Depositing Heteroepitaxially InP on GaAs Semi-Insulating Substrates.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Wieder,Herman H ; Parkerson,Charles R

Report Date : 09 Feb 1982

Pagination or Media Count : 5

Abstract : A method is given for depositing high quality indium phosphide layers heteroepitaxially on GaAs substrates by controlling the growth between them of an interfacial quaternary alloy of In(y)Ga(1-y)As(x)P(1-x).

Descriptors :   *Patents, *Indium phosphides, *Vapor deposition, *Gallium arsenides, Substrates, Epitaxial growth, Heterogeneity, Quaternary compounds, Field effect transistors, Gunn effect, Crystal lattices, Defects(Materials)

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE