Accession Number : ADD009519

Title :   Inhibited Barrier Non-Alloyed Ohmic Contacts.

Descriptive Note : Patent Application,


Personal Author(s) : Malik,Roger J

Report Date : 17 Jun 1982

Pagination or Media Count : 9

Abstract : A non-alloyed ohmic contact for an epilayered semiconductor structure comprising a relatively thin barrier region of semiconductor material, which is a portion of a top layer of semiconductor material, and an outer contact layer of non-reactive metallization contiguous to the top layer. The barrier region is of a thickness of 20A or less and is formed between the metal-semiconductor interface and a planar donor region of relatively high dopant concentration with respect to the doping concentration of the remainder of the top layer. This is achieved by suspending the epitaxial growth, provided by the process of molecular beam epitaxy, of the top layer just prior to the termination of semiconductor growth whereupon dopant material of a relatively high concentration of like dopant atoms is deposited on the surface of the terminated top layer to obtain an area of high donor concentration in order of 10 to the 12th power donors per square centimeter, after which grow this momentarily restarted to provide a capping layer of semiconductor of 20A or less, after which a non-reactive layer of metallization is deposited on the semiconductor surface under vacuum in the same growth system to preclude the formation of intervening insulating oxide layer between the semiconductor and metal. (Author)

Descriptors :   *Patent applications, *Electric contacts, *Epitaxial growth, *Molecular beams, Semiconductors, Metals, Layers, Doping, Deposition, Ohmmeters, Inventions

Subject Categories : Particle Accelerators

Distribution Statement : APPROVED FOR PUBLIC RELEASE