Accession Number : ADD009530

Title :   Low-Barrier-Height Epitaxial GE-GaAS Mixer Diode.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Christou,Aristos ; Davey,John E

Report Date : 16 Feb 1982

Pagination or Media Count : 4

Abstract : A high-frequency (9.3 GH2-94 GH2) gallium arsenide (GaAs) mixer diode having a low Schottky barrier height (approximately 0.4 eV) for operating at low noise figure levels at low local oscillator power levels (0.25 mW -0.75 mW), includes a GaAs substrate, a thin (about 100 A) epitaxial layer of germanium on the substrate, the epitaxial germanium being deposited at a rate of about 6 A per minute and at a substrate temperature in the range of 325 degrees C.-425 degrees C, a layer of silicon dioxide (Si02), the Si02 being etched, and layers of platinum-titanium-molybdenum-gold on the growth of epitaxial germanium. Contact areas are then plated with a layer of gold. Ohmic contact to the GaAs substrate side includes a deposition of gold-germanium alloy. Each of the layers are individually deposited at certain temperatures and thicknesses in a vacuum. (Author)

Descriptors :   *Patents, *Gallium arsenides, *Semiconductor diodes, *Epitaxial growth, *Mixers(Electronics), Electric contacts, Level(Quantity), Vacuum, Layers, Low noise, Gold, Sides, Germanium, Noise, Schottky barrier devices, X band, Temperature, Diodes, Silicon dioxide, Thickness, Substrates, M band

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE