Accession Number : ADD009538

Title :   Method and Apparatus for Electrically Testing Radiation Susceptibility of MOS Gate Devices.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : McGarrity,James M ; Boesch,Harold E , Jr

Report Date : 06 Apr 1982

Pagination or Media Count : 6

Abstract : A method and apparatus are disclosed for testing susceptibility of a gate insulator in MOS and MIS devices to irradiation without use of ionizing radiation. The method consists of simulating the effects of radiation by applying a high magnitude, pulsed electric field to the device under test. An apparatus capable of determining the relationship between voltage applied to the device under test and the device capacitance is used to provide the desired susceptibility information. (Author)

Descriptors :   *Patents, *Metal oxide semiconductors, *Semiconductor devices, *Gates(Circuits), *Radiation effects, *Test methods, Ionizing radiation, Electric fields, Pulses, Simulators, Voltage, Capacitance, Inventions

Subject Categories : Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE