Accession Number : ADD009625

Title :   Refractory Passivated Ion-Implanted GaAs Ohmic Contacts.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Christou,Aristos ; Davey,John E

Report Date : 18 May 1982

Pagination or Media Count : 4

Abstract : A method of attaining n+ regions with fine planar geometry in the source and drain of GaAs devices utilizing ion implantation which improves ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. 29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10 to the minus 6th power ohm/cm squared-range. (Author)

Descriptors :   *Patents, *Gallium arsenides, *Ion implantation, Passivity, Refractory coatings, Titanium alloys, Tungsten alloys, Overlays, Gold

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE