Accession Number : ADD009636

Title :   InP:Te Protective Layer for Reducing Substrate Dissociation.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Hawrylo,Frank Z

Report Date : 25 Jun 1982

Pagination or Media Count : 10

Abstract : In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellerium to a concentration of about high 10 to the 18th power to low 10 to the 19th power.

Descriptors :   *Patent applications, *Semiconductor devices, *Deposition, *Lasers, *Fabrication, Phosphorus, Epitaxial growth, Indium phosphides, Substrates, Dissociation, Gallium arsenides, Drops, Variations, Planar structures, Inventions

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE