Accession Number : ADD009636
Title : InP:Te Protective Layer for Reducing Substrate Dissociation.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Hawrylo,Frank Z
Report Date : 25 Jun 1982
Pagination or Media Count : 10
Abstract : In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellerium to a concentration of about high 10 to the 18th power to low 10 to the 19th power.
Descriptors : *Patent applications, *Semiconductor devices, *Deposition, *Lasers, *Fabrication, Phosphorus, Epitaxial growth, Indium phosphides, Substrates, Dissociation, Gallium arsenides, Drops, Variations, Planar structures, Inventions
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE