Accession Number : ADD009642

Title :   VMOS-FET IMPATT Diode Pulse Bias Circuit.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Best,Ronald Scott

Report Date : 01 Jun 1982

Pagination or Media Count : 22

Abstract : This invention describes a VMOS-FET, IMPATT diode pulse bias circuit designed to provide a Gallium Arsenide IMPATT diode with a specified operating voltage and current under required conditions to generate an RF pulse. (Author)

Descriptors :   *Patent applications, *Impatt diodes, *Gallium arsenides, *Radiofrequency pulses, Field effect transistors, Metal oxide semiconductors, Bias, Inventions

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE