Accession Number : ADD009648

Title :   Three-Mirror Active-Passive Semiconductor Laser.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Garmine,Elsa M ; Evans,Gary A ; Niesen,Joseph W

Report Date : 07 Jun 1982

Pagination or Media Count : 19

Abstract : Disclosed is a gallium arsenide laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation. (Author)

Descriptors :   *Patent applications, *Semiconductor lasers, *Gallium arsenide lasers, *Semiconductor diodes, Heterojunctions, Layers, Optical waveguides, Etching, Laser cavities, Mirrors, Laser beams, Narrow gap semiconductors

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE