Accession Number : ADD009652

Title :   Planar Doped Barrier Transferred Electron Oscillator.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Malik,Roger J ; Iafrate,Gerald J

Report Date : 12 Jul 1982

Pagination or Media Count : 13

Abstract : A transferred electron semiconductor device in the form of an oscillator, for example, is fabricated by a molecular beam epitaxy growth process wherein a plurality of semiconductor layers are sequentially grown on a planar substrate. A pair of ohmic contacts are formed on the outer surface of the substrate and the uppermost layer with the resulting structure including two distinct intermediate semiconductor regions, the first being a drift region adapted to exhibit a differential negative resistance due to the transferred electron effect, and the second being a planar doped barrier region for accelerating electrons into the upper valley and injecting them into the drift region. By the use of a planar doped barrier a more uniform electric field is obtained along with a controlled lower barrier height whereby the transfer of electrons to the upper conduction band satellite valley can be made to occur over much shorter times and distances thus extending the upper frequency range of operation. (Author)

Descriptors :   *Patent applications, *Oscillators, *Semiconductor devices, *Negative resistance circuits, *Semiconductors, Transfer, Electric contacts, Regions, Planar structures, Height, Surfaces, Gallium arsenides, Barriers, Layers, Doping, Valleys, Substrates, External, Electric fields, Drift, Control, Electrons

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE