Accession Number : ADD009653

Title :   Multi-Dimensional Quantum Well Device.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Iafrate,Gerald J ; AuCoin,Thomas A

Report Date : 16 Jul 1982

Pagination or Media Count : 15

Abstract : A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons. (Author)

Descriptors :   *Patent applications, *Semiconductor devices, *Semiconductors, Carrier mobility, Confinement(General), Quantum theory, Group III compounds, Charge carriers, Planar structures, Silicon, Electrons, Cylindrical bodies, Sizes(Dimensions), Thermal stability, Thin films, Layers, Shape, Materials, Crystal lattices, Regions, High rate, Group IV compounds

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE