Accession Number : ADD009681

Title :   Ionizing Radiation Dose Monitor Using Silicon-on-Sapphire Transistor.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Srour,Joseph R ; Curtis,Orlie L ; Othmer,Siegfried ; Chen,Susan C C

Report Date : 14 Apr 1982

Pagination or Media Count : 9

Abstract : A reusable solid state device is disclosed which monitors ionizing radiation. The device is a silicon-on-sapphire n-channel MOS transistor having a back-channel leakage current which is proportional to total radiation dose. To return the monitor to its original reusable state, the drain-to-source transistor bias is reduced to zero while irradiating the device to an appropriate dose level. (Author)

Descriptors :   *Patent applications, *Transistors, *Silicon, *Sapphire, *Metal oxide semiconductors, Ionizing radiation, Monitors, Dosage, Dosimeters, N type semiconductors, Radiation dosage, Reusable equipment, Leakage(Electrical), Inventions

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE