Accession Number : ADD009740

Title :   Mesa Epitaxial Diode with Oxide Passivated Junction and Plated Heat Sink.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Goronkin,Herbert

Report Date : 20 Jul 1982

Pagination or Media Count : 5

Abstract : An oxide passivated mesa epitaxial diode with an integral heat sink, and a process by which it may be fabricated. The passivation layer of highly pure thermally grown silicon dioxide is formed over the mesa walls in the region of the pn junction without causing a reaction between the contact metals and their surroundings during the high temperature environment imposed during thermal growth. The heat sink is deposited after the Si02 passivation has been grown, replacing a polycrystalline silicon layer beneath the mesa formation which was used as a temporary structural support. Dopant, to form the pn junction, is introduced into the silicon wafer after the formation of the passivation layer but before the heat sink is deposited. (Author)

Descriptors :   *Patents, *Diodes, *Epitaxial growth, *Mesa diodes, Oxides, Heat sinks, Plotting, Passivity, Layers, Purity, Silicon dioxide, Walls, Polycrystalline, Inventions, Junctions, Wafers

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE