Accession Number : ADD009836
Title : PbS(x)Se(1-x) Semiconductor.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Schoolar,Richard B
Report Date : 13 Jul 1982
Pagination or Media Count : 17
Abstract : A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, (Pb)(a)(S(x)(Se(1-a))(1-a) wherein x varies between one and zero, inclusive, and a=0.500 + or - 0.003, deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical and optical properties.
Descriptors : *Patents, *Semiconductor devices, *Lead alloys, *Selenides, *Epitaxial growth, *Layers, Chalcogens, Fabrication, Sulfides, Substrates, Barium halides, Fluorides, High temperature, Inventions, Electrical properties, Vapors
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE