Accession Number : ADD009896

Title :   Heterojunction and Schottky Barrier EBS Targets.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Wieder,Herman H

Report Date : 21 Sep 1982

Pagination or Media Count : 8

Abstract : A metal semiconductor field effect transistor (MESFET) has a Schottky barrier gate formed by depositing an electron transparent electrode to allow its modulation by electric fields and electron beams. The electrode is coupled to an electric field source which is maintained constant or is varied for changing the current flow between the source electrode and drain electrode. An impinging modulating electron beam is directed through the transparent gate to further modulate the current flow between the source electrode and drain electrode and to effect an overall gain in the neighborhood of 10 to the 6th power. The accelerating potential of the electron beams is of at least an order of magnitude less than conventional cathode ray tube potentials to reduce the possibility of damage to the MESFET material and, since a number of the MESFETS can be modulated by one or more electron beams, they have wide frequency selectives, broad bandwidths and high switching time capabilities. (Author)

Descriptors :   *Patents, *Electron tube targets, *Field effect transistors, *Schottky barrier devices, Electron beams, Gallium arsenides, Gates(Circuits), Modulation, Sources, Broadband, Electrodes, Frequency, Drainage, Transparence, Electric fields, Bandwidth

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE