Accession Number : ADD009915
Title : Refractory Ohmic Contacts to GaAs and the Method of Making Same.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Lewis,Bernard L
Report Date : 25 Mar 1982
Pagination or Media Count : 20
Abstract : The present invention is directed in general to novel ohmic contacts with gallium arsenide (GaAs) electronic devices utilizing refractory metals to form the contacts and to a novel method of making these contacts. Low specific contact resistance ohmic contacts to N-type GaAs using epitaxial germanium (Ge) films formed by molecular beam epitaxy and vacuum epitaxy are known in the art. Theoretically, the epitaxial Ge film allows the formation of contacts with a uniform N layer, in the highly doped Ge film itself or from Ge doping of the GaAs. In theory such contacts should be more nearly free of imperfections compared to polycrystalline Ge or AuGe eutectic films in which rapid impurity diffusion occurs at grain boundaries.
Descriptors : *Patent applications, *Gallium arsenides, *Electric contacts, Refractory metals, Deposition, Germanium, Annealing, Pulsed lasers, Semiconductor devices, Inventions
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE