Accession Number : ADD009921

Title :   A Planar Compound Semiconductor Insulated Gate Field Transistor (IGFET) and a Virtual Self-Aligned Process for Making the Same.

Descriptive Note : Patent Application,


Personal Author(s) : Tseng,Wen F ; Bark,Marvin L

Report Date : 29 Sep 1982

Pagination or Media Count : 20

Abstract : The present Invention relates, in general, to a novel compound semiconductor insulated gate field effect transistor (IGFET) and to a novel process for making the device. Indium phosphide (InP) has received increasing attention as a promising semiconductor material in the field of high frequency microwave devices and high speed logic circuits due to its high electron drift velocity. The electron drift velocity for InP is higher than other conventional semiconductors, i.e., silicon (Si) and gallium arsenide (GaAs). Additionally, the use of semi-insulating InP has been found to result in a 100 times reduction in parasitic capacitance as compared to that of conventional p-type substrates.

Descriptors :   *Patent applications, *Field effect transistors, *Gates(Circuits), *Fabrication, Indium phosphides, Substrates, Semiconductors, Insulation, Channels, Alignment, Layers, Planar structures

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE