Accession Number : ADD009969

Title :   Composite Resist Structures for Submicron Processing in Electron/Ion Lithography.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Chin,Te Ning

Report Date : 10 Aug 1982

Pagination or Media Count : 8

Abstract : Composite resist structures are described for processing submicron electronics and optical circuits requiring very good pattern resolution between lines because of extremely close spacings between circuit elements. The present invention discloses matrix and layer structures wherein high atomic number (Z) material is used to confine the scattering of the electron beams in the resist. A low Z material is used in combination with a high Z material in the layered configuration to slow down electron velocities without creating a great number of scattered electrons.

Descriptors :   *Patent applications, *Composite structures, *Lithography, *Integrated circuits, *Optical circuits, Gold, Aluminum, Layers, Thin films, Substrates, Matrix materials, Electrons, Ions, Inventions

Subject Categories : Laminates and Composite Materials
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE