Accession Number : ADD009984

Title :   P+N Gallium Phosphide Photodiodes.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Chiang,Alice M

Report Date : 14 Dec 1982

Pagination or Media Count : 5

Abstract : A photodiode detector apparatus having a Gallium Phosphide ion implantation junction thereon to provide high quantum efficiency at wavelengths equal to or less than 0.5 micron incident wavelength while utilizing a shallow junction. (Author)

Descriptors :   *Patents, *Gallium phosphides, *Semiconductor junctions, *Detectors, Photodiodes, Quantum efficiency, Ion implantation

Subject Categories : Optical Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE