Accession Number : ADD010030

Title :   Improved TUNNETT Diode and Method of Making.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Christou,Aristos ; Davey,John E

Report Date : 29 Oct 1982

Pagination or Media Count : 17

Abstract : A TUNNETT(Tunneling Transit Time) electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector. (Author)

Descriptors :   *Patent applications, *Gallium arsenides, *Schottky barrier devices, *Semiconductor diodes, *Epitaxial growth, Electronic equipment, Electric contacts, Electrodes, Injectors, Regions, Germanium, Thinness, Doping, Vacuum, Metals, Drift

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE