Accession Number : ADD010062

Title :   Annealing of Ion-Implanted GaAs and InP Semiconductors.

Descriptive Note : Patent

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Molnar,Bela

Report Date : 02 Nov 1982

Pagination or Media Count : 6

Abstract : A method of annealing both N and P-type ion-implanted GaAs as InP semiconductors by using a close-contact capping technique. A flat polished ion-implanted surface on a gallium arsenide (GaAs) or indium phosphide (InP) semiconductor is placed in face-to-face contact with a non-reactive flat surface such as Si3N4, SiO2, A1N, or identical semiconductor material, and annealed at selected elevated temperatures and time dependent upon ion concentration. The annealed semiconductor material, usually in the form of a wafer, is allowed to cool to room temperature for further processing. (Author)

Descriptors :   *Patents, *Ion implantation, *Gallium arsenides, *Semiconductors, Annealing, Indium phosphides, Surfaces, Silicon nitrides, High temperature, Wafers, Processing, Inventions

Subject Categories : Particle Accelerators
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE