Accession Number : ADD010141

Title :   High Frequency Ohmic Contact.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Christou,Aristos ; Davey,John E

Report Date : 29 Dec 1982

Pagination or Media Count : 31

Abstract : In one embodiment, a ring-shaped contact is formed around a high frequency semiconductor component such as a Schottky diode, with the ring contact being made through a ring-shaped window down to the active semiconductor layer which forms part of the Schottky diode. A high conductivity second semiconductor layer is formed in the ring-shaped window adjacent the active semiconductor layer before depositing electrical contact material therein. An electrical contact bridge is formed from the top of the Schottky diode across the surrounding ring-shaped contact. In a preferred construction of this embodiment, the active semiconductor layer is n-type InP disposed on a substrate of semi-insulating InP, the Schottky metalization for the diode is a refractory metal, and the second semiconductor layer is n(+)InP formed by diffusion an n type doping agent into the active semiconductor layer.

Descriptors :   *Patent applications, *Schottky barrier devices, *Semiconductor diodes, *Electric contacts, *Indium phosphides, High frequency, Substrates, N type semiconductors, Doping

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE