Accession Number : ADD010277
Title : Monolithic Fully Integrated Class B Push-Pull Microwave GaAs MESFET with Differential Inputs and Outputs with Reduced Miller Effect.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder,Max N
Report Date : 12 Apr 1983
Pagination or Media Count : 6
Abstract : A class B microwave, push-pull, balanced amplifier and amplifying element for use therein is disclosed. A field-effect transistor having at least two gates, two drains and a common source has, inter alia, a center-tapped output transformer connected across the drains. A branch including a DC voltage source connects the center-tap of the transformer and the common source of the field effect transistor. Parasitic loss mechanisms associated with the source contracts and leads are eliminated because the current in the branch connecting the source to the transformer is not at the signal frequency. The FET can comprise a semiconductor body having alternating drain and source electrodes with gate electrodes therebetween. Source electrodes are connected to one output terminal. The remaining drain electrodes are connected to the other output terminal. The two gate electrodes lying between any two gate consecutive drain electrodes are respectively connected to opposite input terminals.
Descriptors : *Patents, *Microwave amplifiers, *Integrated circuits, *Transistor amplifiers, *Field effect transistors, *Gallium arsenides, Semiconductors, Losses, Electrodes, Voltage, Monolithic structures(Electronics), Transistors, Amplifiers, Drainage, Terminals, Amplification, Microwaves, Gates(Circuits), Losses, Transformers, Direct current, Capacitance, Output, Input, Sources, Signals, Frequency, Bodies
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE