Accession Number : ADD010283
Title : Method for Growing an Epitaxial Layer of HgCdTe Grown on a CdTe Substrate.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC
Personal Author(s) : Wang,Cheng-Chi ; Chu,Muren
Report Date : 15 Mar 1983
Pagination or Media Count : 7
Abstract : Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase epitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe = 36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520 C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg(1-x)Cd(x)Te interface has been as small as 0.3 micrometer for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to approx. 2.8 micrometer at 77K has been demonstrated.
Descriptors : *Patents, *Epitaxial growth, *Methodology, *Layers, Crystal growth, Cadmium tellurides, Substrates, Liquid phases, Mercury, Tin, High temperature, Diffusion, Interfaces, Inventions
Subject Categories : Fabrication Metallurgy
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE