Accession Number : ADD010294

Title :   Gallium Arsenide-Germanium Heteroface Junction Device.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Rahilly,W Patrick

Report Date : 24 May 1983

Pagination or Media Count : 6

Abstract : Doping with one of the Group Ia elements Li, Na or K near the heteroface junction produces P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the Group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge. (Author)

Descriptors :   *Patents, *Semiconductor devices, *Gallium arsenides, *Heterojunctions, Solar cells, Germanium compounds, Manufacturing, Processing, Fabrication, Doping, Wafers, Vapor deposition, Inventions

Subject Categories : Fabrication Metallurgy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE