Accession Number : ADD010299

Title :   Dual Species Ion Implantation into GAAS.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Park,Yoon S ; Yeo,Yung K

Report Date : 31 May 1983

Pagination or Media Count : 13

Descriptors :   *Patents, *Ion implantation, *Gallium arsenides, *Dual mode, Germanium, N type semiconductors, P type semiconductors, Layers, Methodology, Predictions, Amphoteric, Ion beams, Inventions

Subject Categories : Particle Accelerators
      Nuclear Physics & Elementary Particle Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE